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| AEGIS SEMICONDUTORES LTDA. A3L:55DT.XXI VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 125OC A3L:55TD.02I A3L:55TD.04I A3L:55TD.06I A3L:55TD.08I A3L:55TD.10I A3L:55TD.12I A3L:55TD.14I A3L:55TD.16I 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 125OC 300 500 700 900 1100 1300 1500 1700 TJ = -40 to 0 OC 200 400 600 800 1000 1200 1330 1520 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 55 85 122 1.1 IFSM Max. Peak non-rep. surge current 1.2 kA 1.26 1.37 6.29 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 125OC, rated VRRM applied after surge. Initial TJ = 125OC, no voltage applied after surge. UNITS O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial TJ = 125OC, rated VRRM applied after surge. C C C O A O IF(RMS) Nom. RMS current A 6.85 I t Max. I t capability 7.17 7.81 It 2 1/2 2 2 t = 8.3 ms kA s t = 10ms t = 8.3 ms kA s 2 1/2 2 Initial TJ = 125 C, no voltage applied after surge. 2 O Max. I t 2 1/2 capability 85.6 Initial TJ = 125 OC, no voltage applied after surge. 2 1/2 1/2 tx . It di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 150 10 2.5 150 2 3(5) A/ms W W mA V N.m (0.1 < tx < 10ms). for time tx = I t * O TJ = 125 C, VD = VDRM , ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:55DT.XXI CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------80 ------50 4 2 ------------TYP. ----------0.7 125 140 --10 --80 --------------110(4) TO-240AA MAX. UNITS 1.47 0.89 3.68 400 200 1.5 200 --500 15 300 150 --2.5 0.2 0.25 0.261 0.273 0.1 --mA mA V V V mW mA mA ms ms TEST CONDITIONS Initial T J = 25OC, 50-60Hz half sine, Ipeak = 173A. O TJ = 125 C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125 C, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25OC, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. O TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125 OC. Exp. to 100% or lin. Higher dv/dt values avaliable. To 80% V DRM, gate open. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125 OC, Rated VRRM and VDRM, gate open. TC = -40OC TC = 25OC TC = -40 C O O V/ms +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25OC TC = 25OC, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, single side cooled. O C/W 180 sine wave, single side cooled. O C/W 120 rectangular wave, single side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) JEDEC Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 120 120 Maximum Allowable Case Temperature 110 110 100 100 90 30 90 30 60 80 60 90 80 70 120 180 70 90 120 60 0 10 20 30 40 50 60 70 *Sinusoidal Waveform 60 *Rectangular Waveform 180 DC 80 0 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A3L:55DT.XXI Maximum Average Forward Power Loss 1000 Maximum Average Forward Power Loss 30 30 Maximum Average Forward Power Loss (W) 900 800 700 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 110 120 *Sinusoidal Waveform Maximum Average Forward Power Loss (W) 700 600 500 400 300 200 100 0 *Rectangular Waveform 60 60 90 120 180 DC 90 120 180 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Average Forward Current (A) Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Forward Voltage Drop 1 Transient Thermal Impedance ZthJC 1000 Instantaneous Forward Current (A) Transient Thermal Impedance ZthJC 2.0 2.5 3.0 3.5 0.1 100 125C 25C 10 0.5 1.0 1.5 0.01 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance AEGIS SEMICONDUTORES LTDA. A3L:55DT.XXI Fig. 7 - Gate Trigger Characteristics TO-240AA 1 ~ G1 K1 + K2 2 G2 - 3 1 2 3 Fig. 8 - Outline Characteristics 45 67 Fig. 9 - Circuit Layout |
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